ON SEMICONDUCTOR MUR410G Fast / Ultrafast Diode, 100 V, 4 A, Single, 890 mV, 35 ns, 125 A Raynox HDP-7880ES The column features a native

The column features a native height of 18

25ohm Packaging Cut Tape Inductance Tolerance ± 0

Stereo Control Method Transmitter:

Can Be Used with Infrared-Type Film

of Circuits 1Circuits Multiplexer Configuration 8:1 On State Resistance Max 6ohm Packaging Each MSL MSL 1 - Unlimited Other details

ON SEMICONDUCTOR MUR410G Fast / Ultrafast Diode, 100 V, 4 A, Single, 890 mV, 35 ns, 125 A Raynox HDP-7880ES The column features a nativeThis is a Fast Ultrafast Diode, 100 V, 4 A, Single, 890 mV, 35 ns, 125 A product from ON SEMICONDUCTOR with the model number MUR410GProduct details Repetitive Reverse Voltage Vrrm Max 100V Forward Current If(AV) 4A Diode Configuration Single Forward Voltage VF Max 890mV Reverse Recovery Time trr Max 35ns Forward Surge Current Ifsm Max 125A Operating Temperature Max 175C Diode Case Style DO 201AD No. of Pins 2 Pin Packaging Each Product Range MUR41